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SCI-E Article

High-Performance RF Power Amplifier Module Using Optimum Chip-Level Packaging Structure
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Author Nam, Hyosung (Dept Elect Syst Engn); ±èÁ¤Çö (Dept Elect & Elect Engn) corresponding author;
Corresponding Author Info Kim, J (corresponding author), Hanyang Univ, Dept Elect & Elect Engn, Ansan 15588, South Korea.
E-mail À̸ÞÀÏjunhkim@hanyang.ac.kr
Document Type Article
Source IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS Volume:69 Issue:6 Pages:5660-5668 Published:2022
Times Cited 0
External Information http://dx.doi.org/10.1109/TIE.2021.3088328
Abstract This article presents a high-performance radio frequency (RF) power amplifier (PA) module for which an optimum chip-level packaging structure is proposed to reduce the operating temperature of the RF PA monolithic microwave integrated circuit (MMIC). Because the output power (P-out) and the efficiency of an RF PA module are strongly affected by the thermal characteristics of the PA MMIC, various types of heat spreader materials and thermal interface materials have been examined to implement the PA chip-level packaging structure, and the optimum combination is proposed for a performance enhancement of the PA module in this article. In addition, the optimum form-factor of the heat spreader was suggested based on a thermal simulation. To verify the proposed PA chip-level packaging structure, a 10 W 6-18 GHz RF PA MMIC using a commercial 0.25-mu m gallium nitride high electron mobility transistor process was designed and implemented for radar applications. The operating temperature of the PA MMIC on the proposed chip-level packaging structure shows a dramatic reduction of 24.8 degrees C, and accordingly, the average P-out and average power-added efficiency are enhanced by up to 9.2% and 2.8%, respectively, when compared with a PA module using the conventional chip-level packaging structure.
Web of Science Categories Automation & Control Systems; Engineering, Electrical & Electronic; Instruments & Instrumentation
Funding
Language English
attached file
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