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SCI Article

Dynamic Photoelectrochemical Device with Open-Circuit Potential Insensitive to Thermodynamic Voltage Loss
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Author Jung, Jin-Young (Dept Mat Sci & Chem Engn); Yu, Jin-Young (Dept Mat Sci & Chem Engn); ÀÌÁ¤È£ (Dept Mat Sci & Chem Engn) corresponding author;
Corresponding Author Info Lee, JH (reprint author), Hanyang Univ, Dept Mat Sci & Chem Engn, 55 Hanyangdaehak Ro, Ansan 15588, Kyeonggi Do, South Korea.
E-mail À̸ÞÀÏjungho@hanyang.ac.kr
Document Type Article
Source JOURNAL OF PHYSICAL CHEMISTRY LETTERS Volume:9 Issue:18 Pages:5412-5418 Published:2018
Times Cited 0
External Information http://dx.doi.org/10.1021/acs.jpclett.8b02295
Abstract The open-circuit potential (V-oc) represents the maximum thermodynamic potential in a device, and achieving a high V-oc is crucial for self-biased photoelectrochemical (PEC) devices that use only solar energy to produce chemical energy. In general, V-oc is limited by the photovoltage (V-ph), which is a potential difference generated by light-induced thermodynamic processes at semiconductor photoelectrodes, such as the generation and recombination of charge carriers. Therefore, low light intensity and nanostructured semiconductor materials degrade V-ph (and V-oc) by inefficient carrier generation and by enhancing recombination loss, respectively. Here, we report that V-oc in dynamic PEC devices employing a porous NiOx/Si photocathode is insensitive to thermodynamic losses, which was clarified by varying the carrier generation and recombination rates. The V-oc values were observed to be unchanged even under a low light intensity of 0.1 sun, as well as for different morphologies such as nanostructured and polycrystalline Si. These findings shed light on the potential merit of dynamically operated PEC systems.
Web of Science Categories Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Atomic, Molecular & Chemical
Funding National Research Foundation of Korea (NRF) [2017R1A2B3006941]; Creative Materials Discovery Program through the NRF - Ministry of Science and ICT [2018M3D1A1057844]
Language English
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